STRUCTURAL AND ELECTROPHYSICAL PROPERTIES OF HEAVILY DOPED SILICON-ON-SAPPHIRE LAYERS GROWN BY MOLECULAR BEAM EPITAXY |
| 5 | |
| 2010 |
| MOLECULAR BEAM EPITAXY OF SILICON |
| scientific article | 621.382 | ||
| 309-312 | silicon, sapphire, mobility, field effect, conductivity |
| The Hall effect measurements have been carried out on thin (0.2-2 micron) silicon-on-sapphire layers grown by sublimation molecular beam epitaxy at substrate temperature 600-700°С from Si sources with different P doping level. The temperature dependences have been measured of specific surface conductance and carrier mobility in field effect. |
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