Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

16+

Title of Article

SPIN RELAXATION PROCESSES OF CONDUCTION ELECTRONS IN SILICON WITH VARIED ISOTOPIC COMPOSITION

Issue	5
Date	2010

Article type	scientific article	UDC	537.9
Pages	335-338	Keywords	monoisotopic silicon, conduction electrons, electron spin resonance (ESR), spin relaxation, spin-orbit interaction, hyperfine interaction, g-factor

Authors

Sukhorukov Andrey VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Ezhevskiy Aleksandr AleksandrovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Gusev Anatoliy VladimirovichInstitut khimii vysokochistykh veschestv RAN, Nizhniy Novgorod
Guseynov Davud VadimovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Popkov Sergey AlekseevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Abstract

The hyperfine contribution to spin relaxation processes of conduction electrons was studied. The investigations were carried out in silicon samples with different content of

File (in Russian)