THE INFLUENCE OF SURFACE DEFECT FORMATION ON PHOTOELECTRIC SPECTRA OF In(Ga)As/GaAs QUANTUM-SIZE HETEROSTRUCTURES GROWN BY VAPOR PHASE EPITAXY |
| 2 | |
| 2012 |
| SOLID-STATE PHYSICS |
| scientific article | 621.382 | ||
| 34-38 | quantum well, quantum dots, temperature dependence of photosensitivity, defect formation, recombination lifetime |
| The influence of surface defect formation induced by anode oxidation and helium ion irradiation of the In(Ga)As/GaAs quantum-size heterostructure surface on photoelectric spectra of these structures has been investigated. It is shown that the photosensitivity of the ground-state optical transition in quantum dots and wells and the temperature dependence of the photosensitivity at low temperatures are sensitive indicators of the defects formed in the quantum-size layers, which are effective recombination centers. |
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