Главная страница
russian   english
16+
<< back

Title of Article

THE INFLUENCE OF DEFECTS ON MECHANICAL PROPERTIES OF EPITAXIAL SILICON LAYERS ON SAPPHIRE


Issue
3
Date
2012

Section
SOLID-STATE PHYSICS

Article type
scientific article
UDC
539.533, 537.533.35
Pages
30-33
Keywords
silicon on sapphire (SOS), atomic force microscopy (AFM), transmission electron microscopy (TEM)


Authors
Krivulin Nikolay Olegovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Pavlov Dmitriy Alekseevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Shilyaev Pavel Anatolevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Korotkov Evgeniy Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Gladysheva Vera Aleksandrovna
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Bobrov Aleksandr Igorevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
Silicon layers grown on sapphire substrates by molecular beam epitaxy at a lower temperature (600 ?С) are investigated. The defect distribution over the silicon layer depth is studied using transmission electron microscopy. The possibility to determine the quality of growing silicon-on-sapphire layers by the Z-modulation mode of AFM has been shown.

File (in Russian)