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Title of Article

RESONANT TUNNELING IN A ?-DOPED THREE-BARRIER STRUCTURE


Issue
6
Date
2012

Section
SOLID-STATE PHYSICS

Article type
UDC
539.534.9
Pages
28-31
Keywords
 


Authors
Agarev Vladimir Nikolaevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Khazanova Sofya Vladislavovna
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The resonant tunneling through a double quantum well formed by a Schottky barrier and two ??-doped layers has been computer-simulated. It has been shown that with a properly selected voltage the resonant tunneling occurs simultaneously through several equidistant levels.

File (in Russian)