ANALYSIS OF GaN LED ELECTROLUMINESCENCE SPECTRA AFTER NEUTRON IRRADIATION |
| 6 | |
| 2012 |
| 621.382:539.12.04 | |||
| 51-55 |
| The results are presented of the study of neutron irradiation influence on GaN/InGaN structures and LEDs on the basis of these structures. Electroluminescence spectra and relaxation time of different spectral components have been studied. Neutron irradiation broadens the electroluminescence spectrum and shifts its maximum into the red region of the spectrum. The change of the spectrum is possibly related to a non-uniform distribution of indium in the quantum wells of the structures. Injected charge carriers are localized in the areas (which are responsible for the long-wave part of the spectrum) with higher indium concentration, and this prevents their diffusion to radiation defects resulting in less electroluminescence degradation from these areas. |
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