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Title of Article

ELECTRON TRANSPORT IN A NANOSTRUCTURED DIODE AT RADIATION-INDUCED DEFECT CLUSTER FORMATION


Issue
4
Date
2013

Article type
scientific article
UDC
53.082, 538.95
Pages
64-66
Keywords
nanoscale devices, radiation exposure, dynamics of defect cluster formation.


Authors
Volkova Ekaterina Valerevna
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Obolenskiy Sergey Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The simulation of radiation defect cluster formation processes in a diode with a nano-sized active region has been carried out. The electron transport processes at the moment of radiation exposure have been studied. The information content of a hypothetical experiment to analyze picosecond processes of radiation defect cluster stabilization is discussed.

File (in Russian)