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Title of Article

ADMITTANCE SPECTROSCOPY OF DEEP LEVELS IN p+-Si/ n-Si:Er/ n+-Si DIODES


Issue
2
Date
 2013

Article type
 scientific article
UDC
538.935
Pages
8-11
Keywords
erbium-doped silicon, sublimation molecular beam epitaxy (SMBE), admittance spectroscopy, deep levels


Authors
Filatov D.O.
NIFTI NNGU im. N.I. Lobachevskogo

Zimovets I.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Mishkin V.P.
Institut fiziki i khimii Mordovskogo gosuniversiteta im. N.P. Ogareva

Chugrov I.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Alyabina N.A.
NIFTI NNGU im. N.I. Lobachevskogo

Kornaukhov A.V.
NIFTI NNGU im. N.I. Lobachevskogo

Kuznetsov V.P.
NIFTI NNGU im. N.I. Lobachevskogo


Abstract
The deep level spectrum in the Si:Er active layers of the LEDs based on the SMBE grown p +-Si/ n -Si:Er/ n +-Si struc- tures has been studied by admittance spectroscopy. The ionization energies, the electron capture cross-sections, and the concentrations of the Er-related deep levels have been determined.

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