Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

THICKNESS UNIFORMITY CALCULATION OF EPITAXIAL LAYERS OBTAINED BY SUBLIMATION-SOURCE MOLECULAR BEAM EPITAXY

Issue	2
Date	2014

Article type	scientific article	UDC	538.9
Pages	72-74	Keywords	molecular beam epitaxy, sublimation source, numerical methods, thickness uniformity of epitaxial silicon layers

Authors

Boldyrevskiy P.B.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Korovin A.G.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Denisov S.A.Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Svetlov S.P.Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Shengurov V.G.Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Abstract

Model calculations have been carried out of the epitaxial layer thickness distribution over the substrate area for a molecular beam formed by a vacuum sublimation source. The calculated results are in good agreement with the experimental data on silicon molecular beam epitaxy.

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