Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

REGULARITIES OF INFLUENCE OF ION IRRADIATION ON PHOTOLUMINESCENCE OF SILICON NANOCRYSTALS IN SiO 2 MATRIX

Issue	1
Date	2014

Article type	scientific article	UDC	537.9 + 535.37
Pages	74-79	Keywords	silicon nanocrystals, silicon dioxide, photoluminescence, ion irradiation, defect formation

Authors

Korolev D.S.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Mikhaylov A.N.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Belov A.I.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Kostyuk A.B.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Karzanova M.V.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Ershov A.V.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Demidov E.S.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Tetelbaum D.I.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Abstract

The article studies the effect of ion irradiation on luminescent properties of silicon nanocrystals in SiO 2 matrix obtained by Si

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