DISCRETE TUNNELING IN nc-Si/Al2O3 MULTILAYER NANOPERIODIC STRUCTURES |
| 3 | |
| 2011 |
| SOLID-STATE PHYSICS |
| scientific article | 621.793; 539.21; 538.935 | ||
| 44-49 | silicon, nanocrystal, alumina, multilayer nanoperiodic structures, electron transport, tunneling, Coulomb blockade |
| The results of experimental studies are presented of current-voltage characteristics of multilayered (18 layers)
nanoperiodic (9-20 nm) structures (MNSs) with alternating ultra-thin layers of SiOx and Al2O3. MNSs have been
annealed at high temperature (1100 ?C) to form Si nanocrystals in the SiOx layers. The results are interpreted using
the discrete tunneling theory, based on the consideration of the Coulomb blockade of electron tunneling along the
chains of Si quantum dots separated by insulating barriers. The calculated number and sizes of Si grains participating
in electron transport are in good agreement with the number and initial thickness of MNS SiOx layers. The latter
testifies to the correctness of the discrete tunneling model and the formation during the annealing process of Si nanocrystals
with sizes limited by the thickness of SiOx layers. |
 |