SYNTHESIS OF DIAMOND-LIKE CARBON FILMS ON SILICON BY DEPOSITION OR IMPLANTATION OF 12C+ IONS |
| 3 | |
| 2011 |
| scientific article | 539.216.2:537.311:322 | ||
| 50-55 | carbon film, MIS structure, silicon carbide, ion implantation |
| We have synthesized a diamond-like carbon film by deposition of carbon ions with energies of 75 eV on the n-Si
(100)-oriented wafer surface using the upgraded accelerator. The film obtained is characterized by high hardness,
optical transparency and resistance to oxidation. A high quality MIS structure Al ?{ C ?{ n-Si ?{ Al with a clearly identified
film/substrate interface has been obtained. The CV characteristic of the structure does not exhibit hysteresis.
The silicon layers implanted by carbon ions with energy 40 keV and a dose of 3.56 ? 1017 cm-2 have been investigated.
The type of conductivity of the Si and SiC crystallites has been determined using thermoelectric power. The
SiC crystallites have a hole type conductivity irrespective of the initial substrate conductivity type, whereas the Si
crystallites have the same conductivity as the substrate. |
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