The optimization of thermal conditions for Czochralski silicon single crystal growing is considered. The effect of crucible rotation rate on heat transfer in a melt has the great scientific and practical interest. Special attention is given to the change of an azimuthal velocity in a subcrystal region of a melt with the increasing rotation rate of the crucible leading to the change of the liquid-solid interface shape. The radial inhomogeneity of an azimuthal velocity connected with the crucible rotation was studied at different intensities of a melt thermal convection. It develops the famous «effect of maximum» well-known in other substances (temperature and impurity concentration). Possibility of thermal optimization was investigated based on the integrated mathematical model using the «Crystmo/Marc Code».
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