The influence of In(Ga)As quantum-size layers on field-effect in GaAs structures |
| 1 | |
| 2008 |
| scientific article | 621.382 | ||
| 25-29 |
| A method to investigate the dynamic field-effect in quantum-size heteronanostructures InAs/GaAs has been developed. The method is based on the measurement of dynamic dependence of surface conductivity on monopolar sinusoidal voltage applied to metal-insulator-semiconductor structure. The influence of InAs quantum dot and InGaAs quantum well layers embedding into GaAs on dynamic field-effect characteristics has been elucidated |
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