We have shown that irradiation of GeO2 thin films with Si+ ions of energy 100-keV and doses of 3•1016 - 3•1017 cm-2 at room temperature results in the formation of hole polarons (self-trapped holes) with the optical absorption band peak at ~3,92 eV and the full width at half maximum of ~1,14 eV. They begin to arise at doses ~3•1016 cm-2 and their content increases sharply with doses more than 1017 cm-2. Annealing the hole polarons at a temperature of 1000 0C in nitrogen atmosphere for 1 hour is effective for doses <3•1016 cm-2. For doses >1017 cm-2, the annealing leads only to a partial decrease in polaron content. This is due to a more complex structure of such defects. The value of the polaron absorption band maximum energy corresponds to the excitation process from unbound 2p-states of neighboring oxygen atoms to the oxygen atom where the hole is localized.
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