The evolution of point defects produced by ion irradiation of solids has been considered theoretically using the
approximate analytical procedure with an account of diffusion and most important secondary processes (formation
of divacancies and absorption of vacancies by unsaturable traps). The calculations have been made with regard to
space-time discreteness of ion impingements on the sample surface. In the case of silicon irradiated by neon ions, the
depth dependences of defect concentration for various doses (irradiation intervals) and the amorphization dose dependence
on the ion flux have been calculated.
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