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Title of Article

Modification of optical properties and phase composition of Si-implanted SiO2 films ion-doped with phosphorus, boron, nitrogen and carbon


Issue
3
Date
 2008

Article type
 scientific article
UDC
537.9:539.534.9:535.37
Pages
40-46
Keywords
 


Authors
Tetelbaum D.I.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskog

Mikhaylov A.N.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskog

Belov A.I.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskog

Kovalev A.I.
NTVP «Poverkhnost», TsNIIchermet imeni I.P. Bardina, Moskva

Vaynshteyn D.L.
NTVP «Poverkhnost», TsNIIchermet imeni I.P. Bardina, Moskva

Finstad T.G.
University of Oslo, Blindern, Norway

Golan Y.
Ben-Gurion University, Beer-Sheva, Israel


Abstract
The influence of P, B, N and С ion-implantation doping on the properties of Si-implanted thermally grown SiO2 layers has been investigated. The impurity atoms were introduced either before or after annealing at 1000 °С or 1100 °С which forms Si nanocrystals. In a certain dose range, the ion implantation enhances the defect-related SiO2 photoluminescence. Introduction of phosphorus up to the concentration of ~ 1 at.% leads to a manifold improvement of 700-750 nm photoluminescence of Si nanocrystals synthesized at 1000 °С and to its quenching at higher concentrations. The quenching is also observed for the P-doped nanocrystals synthesized at 1100 °С. Doping with B, N and C reduces this luminescence band under all conditions. Silicon carbide, elemental carbon and silicon precipitates responsible for light emission in the whole visible region are formed in SiO2 matrix at carbon doping. Possible causes of the results obtained are discussed.

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