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Title of Article

Application of photoelectric spectroscopy to study the energy spectrum of InGaAs/GaAs quantum size heteronanostructures grown by vapor phase epitaxy


Issue
4
Date
2008

Article type
scientific article
UDC
621.382
Pages
43-48
Keywords
 


Authors
Istomin L.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Karpovich I.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Gorshkov A.P.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Zvonkov B.N.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Pavlov A.P.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
Diagnostics features and possibilities of the energy spectrum of InGaAs/GaAs quantum-size heteronanostructures (QSHS) grown by MOCVD have been studied using various photoelectric spectroscopy techniques (photovoltaic effect in QSHS contact barriers with metal, liquid electrolyte and dielectric and planar photoconductivity). Optimal conditions for their application have been clarified.

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