The results of modification of the atmospheric pressure vapor phase epitaxy growth mode of InAs/GaAs quantum
dots are presented. In contrast to a standard growth mode, the feed rate of TMI and arsine into the growth reactor
was increased and varied from 4 to 18 s. It is shown that the optimization of the growth interruption time allows
to obtain quantum dot lattices with a high surface concentration up to 6?1010 cm-2 and to decrease the concentration
of huge relaxed clusters without additional chemical treatment (surfactant doping or chemical etching). Structures
grown by the modified technique have a high electroluminescence intensity of Schottky diodes, collected from the
sample end face at room temperature.
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