A mechanism for forming monocrystal oscillatory zoning patterns has been proposed. A stochastic modeling algorithm
for two-component crystal growth has been used to analyze the conditions of oscillatory zoning origin. The
algorithm allows studying the regularities of normal and level-by-level growth of crystal face. The model provides
the realization of layer-spiral dislocation and level-by-level growth mechanisms due to two-dimensional nuclei formation.
The model dependences of face normal growth rate on supersaturation are approximated by theoretical functions
confirmed by experiments. The model simulation has shown a possibility to form both uniform and quasiperiodic
impurity distributions whose parameters agree with oscillatory zoning patterns of real chips.
|
