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Title of Article

ELECTROLUMINESCENCE OF Ni/AlAs/GaAs/InGaAs/GaAs SCHOTTKY DIODES


Issue
2
Date
 2009

Section
SOLID-STATE PHYSICS

Article type
 scientific article
UDC
537.11
Pages
44-48
Keywords
Schottky diode, electroluminescence


Authors
Danilov Yu.A.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, Nauchno-obrazovatelnyy tsentr «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo

Demina P.B.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Dorokhin M.V.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Zvonkov B.N.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Pitirimova E.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Prokofeva M.M.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, Nauchno-obrazovatelnyy tsentr «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo


Abstract
The investigation results of electroluminescence of Schottky diodes on InGaAs/GaAs quantum-well heterostructures have been presented. A possibility has been considered to apply a thin interfacial semiconductor AlAs layer to increase the electroluminescence intensity of the structures under study. Such an increase has been detected in Ni/AlAs/GaAs structures in comparison with control Ni/GaAs diodes. The highest electroluminescence intensity has been observed for diodes with the 2.5 nm thick AlAs layer. The change of AlAs layer properties during storage has been revealed which may be caused by its oxidation.

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