Structurally perfect, single-crystal silicon layers have been grown on (11 02) sapphire by sublimation-source
molecular-beam epitaxy. X-ray and electron diffraction data demonstrate that silicon-on-sapphire (SOS) epitaxy
occurs at substrate temperatures from 600 to 850ЃC. The following ways to improve the SOS-structure quality have
been proposed: (1) post-growth annealing of the SOS-structures and (2) room-temperature deposition of a thin silicon
interlayer prior to the growth of the main silicon layer.
|
