INVESTIGATION OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE LAYERS BY Z-MODULATION ATOMIC FORCE MICROSCOPY |
| 3 | |
| 2009 |
| SOLID-STATE PHYSICS |
| scientific article | 539.23 | ||
| 43-48 | silicon, SOS - silicon on sapphire, AFM - atomic force microscopy, elastic properties, microhardness |
| Molecular beam epitaxy (MBE) silicon-on-sapphire submicron layers (30-1000 nm) have been investigated using Z-modulation atomic force microscopy (AFM). The difference in elastic properties of the silicon layer and the sapphire substrate has been shown to depend on the thickness of the deposited silicon layer and the growth temperature. The Z-modulation contrast has also been detected on the Si clusters formed at earlier epitaxial growth stages |
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