A semiconductor laser diode with a wide bandgap layer and two different asymmetrically located quantum wells in a waveguide has been designed, fabricated, and investigated. The laser diode generates simultaneously TE0 and TE1 modes at wavelengths 1.05 µm and 0.9 µm, respectively, in a broad range of pumping currents at liquid nitrogen temperature. Observations of the sum frequency radiation have demonstrated a possibility of an intracavity nonlinear different order mode mixing in the developed dual-wavelength diode laser.
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