Photodiodes (PD) with «large» circular and annular areas having common centre have been fabricated using the ion implantation planar technology and their photoelectric characteristics have been studied. At the same time, PDs fabricated by the serial alloy technology have been studied. In both cases, the photoelectric parameters have been measured according to GOST 17772-88 standard. Volt-ampere characteristics and noise power spectral densities of both types of PDs have also been measured. The replacement of the serial alloy fabrication technology by the ion implantation planar one has been found to improve PD threshold parameters by the factor of 2 to 2.5.
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