EFFECT OF ION DOPING, ANNEALING AND HYDROGENATION ON PHOTOLUMINESCENCE OF a-Si/ZrO2 AND a-SiOx/ZrO2 NANOPERIODIC MULTILAYERED STRUCTURES |
1 | |
2010 |
SOLID-STATE PHYSICS |
scientific article | 539.216.2 + 539.23 + 535.37 | ||
37-45 | nanoperiodic structure, silicon nanocrystal, zirconia, ion implantation, annealing, hydrogenation, photoluminescence |
The results of investigation of photoluminescence (PL) of a-Si/ ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodic
(5-10 nm) structures (MNSs) prepared by vacuum evaporation, doped by implantation of boron, phosphorus ions
and co-doped by boron and phosphorus ions as dependent on high-temperature (1000-1100?C) annealing (HTA) and
hydrogenation are reported. Raman scattering studies of MNSs have shown the formation of Si nanocrystals (NCs)
responsible for size-dependent visible PL. Implantation of boron and phosphorus ions combined with HTA leads to
MNS PL quenching, but post-hydrogenation gives rise to PL enhancement in short-wave spectrum band due to the
contribution of radiative defects and small-size Si NCs. |
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