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Title of Article

EFFECT OF ION DOPING, ANNEALING AND HYDROGENATION ON PHOTOLUMINESCENCE OF a-Si/ZrO2 AND a-SiOx/ZrO2 NANOPERIODIC MULTILAYERED STRUCTURES


Issue
1
Date
2010

Section
SOLID-STATE PHYSICS

Article type
scientific article
UDC
539.216.2 + 539.23 + 535.37
Pages
37-45
Keywords
nanoperiodic structure, silicon nanocrystal, zirconia, ion implantation, annealing, hydrogenation, photoluminescence


Authors
Ershov A.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Tetelbaum D.I.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Chugrov I.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Belov A.I.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Vasilev V.K.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Ershov A.A.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Karabanova I.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Mashin A.I.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Mikhaylov A.N.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Nezhdanov A.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The results of investigation of photoluminescence (PL) of a-Si/ ZrO2 and a-SiOx/ZrO2 multilayered nanoperiodic (5-10 nm) structures (MNSs) prepared by vacuum evaporation, doped by implantation of boron, phosphorus ions and co-doped by boron and phosphorus ions as dependent on high-temperature (1000-1100?C) annealing (HTA) and hydrogenation are reported. Raman scattering studies of MNSs have shown the formation of Si nanocrystals (NCs) responsible for size-dependent visible PL. Implantation of boron and phosphorus ions combined with HTA leads to MNS PL quenching, but post-hydrogenation gives rise to PL enhancement in short-wave spectrum band due to the contribution of radiative defects and small-size Si NCs.

File (in Russian)