STRUCTURAL ANALYSIS OF CARBON IMPLANTED SILICON LAYERS |
| 1 | |
| 2010 |
| scientific article | 537.311:322 | ||
| 46-56 | silicon carbide, ion implantation, structure, crystallization |
| The composition and structure of homogeneous SiC0.7 layers derived by multiple high-dose implantation of 40-,
20-, 10-, 5-, and 3-keV carbon ions are studied by Auger electron spectroscopy, X-ray diffraction, transmission electron
microscopy, IR spectroscopy and atomic force spectroscopy. The influence of carbon and silicon-carbon cluster
disintegration on the formation of tetrahedral Si-C bonds and crystallization processes in silicon layers with high
carbon concentration is discussed. |
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