A comparative study has been carried out of the radiation exposure influence on the surface morphology of silicon-
on-insulator and silicon-on-sapphire device structures. Before the exposure to radiation, the surface morphology
of silicon films had a block nature with very much pronounced mosaic structure and average roughness of about 25
nm. Electron and X-ray radiation led to distinct relief smoothing of silicon film surface of SOI and SOS structures
resulting in a more uniform nature of the surface microrelief. Thus, the radiation exposure made it possible to modify
the surface morphology of silicon heterostructures.
|
