The relations between the parameters of deposition, structure, surface morphology and electrophysical properties
of MBE grown thin n-silicon on sapphire films have been established. A transitional layer has been found to form at
the initial stages of silicon growth. This layer of thickness up to 0.3 ?m is a mixture of block oriented crystallites and
amorphous phase of silicon. The layer electrical conductivity has a barrier mechanism with an activation energy of
0.1-0.28 eV and small values of mobility 30-60 cm2/V?s. The dependence of formation of deep acceptors in silicon
on layer thickness has been discovered.
|
