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Title of Article

ATOMIC FORCE MICROSCOPY OF AL2O3 FILM SURFACE EXPOSED TO SILICON ION IRRADIATION AND HIGH-TEMPERATURE ANNEALING


Issue
3
Date
 2010

Article type
 scientific article
UDC
537.9 + 539.534.9:535.37
Pages
54-60
Keywords
alumina film, silicon, ion implantation, atomic force microscopy, hillock, crater


Authors
Belov Aleksey Ivanovich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Ershov Aleksey Valentinovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Kudryashov Mikhail Aleksandrovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Mikhaylov Aleksey Nikolaevich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo

Chugrov Ivan Aleksandrovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Mashin Aleksandr Ivanovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Tetelbaum David Isaakovich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo


Abstract
The results of atomic force microscopy investigations of Al2O3 thin film surface implanted with Si+ ions have been presented as dependent on irradiation dose (5·1016-3·1017 cm-2) and the temperature of the subsequent hightemperature annealing. The formation of hillocks and craters has been found, their sizes and surface density being dependent on the dose and annealing temperature (700-1100єC). The origin of hillocks is connected with the blistering of gaseous oxygen penetrating into the film during the deposition and/or released due to ion-irradiationinduced dissociation of oxide. The relation between the results and the luminescent properties of the implanted films are discussed.

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