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Title of Article

SIZE QUANTIZATION EFFECTS IN THIN ALUMINIUM FILMS


Issue
3
Date
2010

Article type
scientific article
UDC
539.216 + 538.975
Pages
61-67
Keywords
two-dimensional structure, quantum size effects, tunnelling, size quantization, current-voltage characteristic, conductivity


Authors
Dobrokhotov Eduard Valerevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The dependence of Al film resistance on thickness and the current-voltage characteristics of tunnel Al - Al2O3 - Al structures were investigated. The Al films were obtained by film deposition on a cold substrate. The films were thinned by the method of ion-plasma etching up to a thickness of ~ 50 - 100 A. Oscillations of dI/dU (U) curve were observed on thinned tunnel structures which can be attributed to the size quantization of the electron spectrum in thin Al films.

File (in Russian)