Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

PECULIARITIES OF THE GROWTH AND PHOTOLUMINESCENCE OF SELF-ASSEMBLED GeSi/Si(001) NANOISLANDS GROWN BY SUBLIMATION MOLECULAR BEAM EPITAXY IN GeH4 AMBIENT

Issue	5
Date	2010

Section

SOLID-STATE PHYSICS

Article type	scientific article	UDC	538.911
Pages	36-45	Keywords	self-assembled GeSi/Si(001) nanoislands, sublimation molecular beam epitaxy in a GeH4 ambient, Оstwald ripening, Lifschitz - Slyozov - Wagner mechanism, photoluminescence

Authors

Isakov Mikhail AleksandrovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Filatov Dmitriy OlegovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Marychev Mikhail OlegovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Shengurov Vladimir GennadevichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Chalkov Vadim YurevichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Denisov Sergey AleksandrovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Abstract

The dependence of the morphology of the self-assembled GeSi/Si(001) nanoislands grown by sublimation molecular beam epitaxy in a GeH4 ambient on the growth conditions has been analyzed. The islands have been shown to grow by Lifschitz - Slyozov - Wagner mechanism. A model for the recombination transitions in the islands taking into account the nonuniformity of the islands' composition and their charging by the photoexcited carriers based on the analysis of the dependence of the photoluminescence spectra on the excitation intensity has been proposed.

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