A model of ?-doped Schottky diode has been suggested aiming at the determination of diode technological areas
responsible for the 1/f noise. The series resistance Rb of base and contacts, and the possible leakage current Ileak have
been taken into account. Diode parameters are defined from the analysis of the current-voltage characteristic. The
dependence of the noise voltage spectrum on the diode current has been studied. For the explanation of the experimental
data, a model of fluctuations in the charge of non-compensated donors in ?-layer of Schottky junction (?Ns -
model) has been suggested. It has been shown that each 106 atoms of the main impurity (Si) of the diodes studied
contain 1-10 atoms of an extraneous impurity which produces 1/f noise.
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