PHOTOELECTRIC SPECTROSCOPY OF THE QUANTUM-SIZE In(Ga)As/GaAs HETERONANOSTRUCTURES GROWN BY VAPOR PHASE EPITAXY |
| 5 | |
| 2010 |
| PHOTOELECTRIC SPECTROSCOPY OF SEMICONDUCTORS |
| scientific article | 621.382 | ||
| 233-242 | photoelectric spectroscopy, quantum well, quantum dots, vapor phase epitaxy, energy spectrum, defect generation |
| A review is given of the research and development carried out in the field of photoelectric spectroscopy and its application to the diagnostics and investigation of the optoelectronic properties of quantum-size In(Ga)As/GaAs heteronanostructures grown by vapor phase epitaxy at the Physics Department and Physico-Technical Research Institute of N. I. Lobachevsky State University of Nizhni Novgorod. |
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