THE EFFECT OF DELTA-Mn DOPING ON PHOTOELECTRIC SPECTRA OF In(Ga)As/GaAs QUANTUM-DOT-QUANTUM-WELL HETEROSTRUCTURES |
| 5 | |
| 2010 |
| scientific article | 621.328 | ||
| 243-246 | photoelectric spectroscopy, quantum well, quantum dots, vapor phase epitaxy, energy spectra, Mn delta-layer, defects |
| The influence of delta-Mn doping of In(Ga)As/GaAs quantum-dot-quantum-well heterostructures on photoconductivity and photovoltaic effect spectra has been studied. It has been shown that embedding of Mn delta-layer leads to suppression of photosensitivity from quantum-confined layers which depends on the type of these layers and the spacer layer thickness. The photosensitivity suppression relates to defect generation, i.e. recombination centers, which decrease quantum efficiency of emission of nonequilibrium carriers from quantum-confined layers. The recombination parameters of some model structures have been determined from measurements of photoconductivity and photomagnetic effects at high photoexcitation levels. |
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