PHOTOLUMINESCENCE MECHANISM OF SiO2 FILMS WITH ION-SYNTHESIZED Si NANOCRYSTALS |
| 5 | |
| 2010 |
| scientific article | 537.9: 539.534.9: 535.37 | ||
| 260-263 | silicon nanocrystal, quantum dot, silicon dioxide, ion implantation, photoluminescence mechanism, exciton energy splitting, exciton migration, interface states |
| The temperature dependence of photoluminescence of thermal SiO2 films with Si nanocrystals ion-synthesized at excess Si concentration of ~ 10 at.% and annealing temperature of 1100°C has been used to calculate exciton energy splitting assuming the interband mechanism of quantum dot luminescence. The observed deviation from the theoretical splitting value dependence is discussed for nanocrystal sizes smaller than 3.3 nm. |
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