LIGHT-EMITTING ION-SYNTHESIZED STRUCTURES BASED ON SILICON NANOCRYSTALS IN OXIDE MATRICES |
| 5 | |
| 2010 |
| scientific article | 537.9: 539.534.9: 535.37 | ||
| 264-270 | silicon nanocrystals, silicon oxide, aluminum oxide, zirconium oxide, ion implantation, photoluminescence, structure |
| Luminescent properties, structure and phase composition have been studied of SiO2, Al2O3 and ZrO2 layers subjected under unified conditions to Si+ ion implantation with subsequent high-temperature annealing to synthesize Si nanocrystals. Physical and physical-chemical factors are discussed which determine the possibility of forming light-emitting Si nanocrystals in these oxide matrices. |
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