Photoluminescence of pyrolytic Si3N4 films enriched with silicon by ion implantation method was investigated. It has been shown that the introduction of silicon with subsequent annealing allows one to control the spectrum of intrinsic PL of amorphous silicon nitride, changing its intensity and red-shifting it by 40-50 nm. Alongside main PL band, silicon introduction leads to the occurrence of an additional luminescence peak at a wavelength near ?=700 nm, whose intensity depends on the dose and temperature of the subsequent annealing.
|
