DIAGNOSTICS OF THIN SILICON-ON-SAPPHIRE LAYERS IN ELECTROLYTE/SEMICONDUCTOR SYSTEM |
| 5 | |
| 2010 |
| scientific article | 621.382 | ||
| 313-316 | silicon on sapphire, electrolyte/semiconductor, capacity, photo-emf |
| A procedure to control thin silicon-on-sapphire layers in an electrolyte/semiconductor system has been developed. The procedure differs from the conventional one by a specific way of making an electrolyte/semiconductor contact. The application of the procedure allows one to define a number of significant layer parameters such as thickness, doping level and profile, and to determine the presence of deep defects in Si layers. |
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