COMPLEX RESEARCH OF PHOTOELECTRONIC PROPERTIES OF GaAs/InGaAs HЕTЕRONANOSTRUCTURES WITH A Mn DELTA LAYER |
| 5 | |
| 2010 |
| scientific article | 621.382 | ||
| 317-320 | h, еtеronanostructures, photo-emf, delta layer, mobility, potential barrier, field effect |
| A metal-dielectric-semiconductor structure has been proposed for complex research of photoelectronic properties of GaAs/InGaAs hеtеronanostructures with a Mn delta layer. We have determined p-type conductivity of the capping and buffer GaAs layer surrounding the Mn delta layer. The field-effect mobility, the energy diagram and some other electrophysical characteristics of GaAs/InGaAs hеtеronanostructures with Mn delta layer have also been determined. |
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