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Title of Article

ELECTRON SPIN RESONANCE WITH DIFFERENT DEGREES OF LOCALIZATION IN ISOTOPICALLY MODIFIED SILICON


Issue
5
Date
 2010

Section
ISOTOPE EFFECTS IN SPIN DYNAMICS

Article type
 scientific article
UDC
537.9
Pages
321-329
Keywords
monoisotopic silicon, shallow and deep donor centers, conduction electrons, electron spin resonance, spin relaxation, spin diffusion length, hyperfine interaction, electron g-factor, spin-orbit interaction


Authors
Ezhevskiy Aleksandr Aleksandrovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Gusev Anatoliy Vladimirovich
Institut khimii vysokochistykh veschestv im. G.G. Devyatykh RAN, Nizhniy Novgorod

Guseynov Davud Vadimovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Sukhorukov Andrey Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Popkov Sergey Alekseevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The results of the study of electron spin resonance (ESR) spectra of monocrystalline silicon with modified isotopic composition are presented. The narrowing of ESR linewidth of donor-localized electrons and conduction electrons in the monoisotopic silicon-28 is considered in comparison with natural silicon which is due to the decrease in contribution of conduction electron hyperfine interaction with

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