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Title of Article

SPIN DIFFUSION AND RELAXATION OF CONDUCTION ELECTRONS IN SILICON


Issue
5
Date
2010

Article type
scientific article
UDC
537.9
Pages
330-334
Keywords
conduction electrons, silicon, lithium, phosphor, spin diffusion, electron paramagnetic resonance, spin relaxation, spin-orbit interaction, electron g-factor


Authors
Guseynov Davud Vadimovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Ezhevskiy Aleksandr Aleksandrovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Sukhorukov Andrey Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Popkov Sergey Alekseevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The processes of spin diffusion and relaxation of conduction electrons in silicon are considered. The experimental data obtained by the electron paramagnetic resonance technique for silicon samples doped by lithium and phosphorus are presented. The experimental results are compared with the Elliott-Yafet theory. The problems of spin relaxation theory and different opportunities for improving the agreement with the experiment are discussed. The influence of sample size on the spin diffusion length and the shift of the conduction electron g-factor are considered.

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