SPIN DIFFUSION AND RELAXATION OF CONDUCTION ELECTRONS IN SILICON |
5 | |
2010 |
scientific article | 537.9 | ||
330-334 | conduction electrons, silicon, lithium, phosphor, spin diffusion, electron paramagnetic resonance, spin relaxation, spin-orbit interaction, electron g-factor |
The processes of spin diffusion and relaxation of conduction electrons in silicon are considered. The experimental data obtained by the electron paramagnetic resonance technique for silicon samples doped by lithium and phosphorus are presented. The experimental results are compared with the Elliott-Yafet theory. The problems of spin relaxation theory and different opportunities for improving the agreement with the experiment are discussed. The influence of sample size on the spin diffusion length and the shift of the conduction electron g-factor are considered. |
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