Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

EFFECTS OF POST-GROWTH ANNEALING ON PHOTOLUMINESCENCE PROPERTIES OF IN(GA)AS/GAAS QUANTUM-DOT HETEROSTRUCTURES

Issue	5
Date	2010

Article type	scientific article	UDC	621.382
Pages	347-349	Keywords	quantum dots, photoluminescence, post-growth annealing

Authors

Zdoroveyschev Anton VladimirovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Malysheva Evgeniya IgorevnaNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Demina Polina BorisovnaNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Dorokhin Mikhail VladimirovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Abstract

The results of the study of photoluminescence properties of heterostructures with In(Ga)As/GaAs quantum dots after post-growth annealing in the temperature range 450?C-750?C are reported . The best stability of the photoluminescent properties during annealing was observed in the quantum-dot heterostructures grown in a growth-interruption mode, with carbon tetrachloride processing and a combined high-temperature capping layer.

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