Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

TEMPERATURE DEPENDENCE OF ELECTROLUMINESCENCE CIRCULAR POLARIZATION OF InGaAs/GaAs HETEROSTRUCTURES WITH A QUANTUM WELL AND A Mn DELTA-LAYER

Issue	5
Date	2010

Article type	scientific article	UDC	537.11
Pages	350-353	Keywords	ferromagnetic semiconductor, electroluminescence, circular polarization

Authors

Prokofeva Marina MikhaylovnaNauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, NOTs «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo
Dorokhin Mikhail VladimirovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Danilov Yuriy AleksandrovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, NOTs «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo

Abstract

We report the results of our studies of circular polarized electroluminescence of light-emitting diodes on the basis of InGaAs/GaAs heterostructures containing a Mn-delta-doped acceptor layer in the GaAs barrier. The purpose of this work was to determine the diode operating temperature range where an effective electroluminescence and radiation circular polarization in the magnetic field are observed. The circular polarization effect is observed at the temperatures below 35 К, which corresponds to the Curie temperature of the structures studied.

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