MORPHOLOGICAL ANALYSIS OF 3D ISLANDS AT INITIAL STAGES OF SOS HETEROEPITAXY |
| 1 | |
| 2011 |
| SOLID-STATE PHYSICS |
| scientific article | 539.234 | ||
| 41-46 | molecular beam epitaxy, silicon on sapphire (SOS), atomic force microscopy, self-organization |
| Lattice mismatch between silicon and sapphire causes strains in a growing silicon layer resulting in the for-mation of 3D islands. The theoretical model used in this work explains island shape instability followed by transition from isotropic to anisotropic shape. Island geometry calculations based on the proposed model are in good agree-ment with atomic force microscopy data on the morphology of SOS layers obtained by molecular beam epitaxy. |
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