Applicability conditions have been considered of a quasi-hydrodynamic approximation to solve the problem of charge transport in silicon nanostructures at temperatures 300-500 K. The temperature sensitivity has been deter-mined of quasi-hydrodynamic model parameters: energy relaxation and quasi-momentum relaxation times of elec-trons, the dependence of electron average energy on uniform electric field intensity. The adequacy of the model has been proved by a comparison of the calculated and measured dependences of electron mobility and average drift velocity on the temperature. The temperature influence on the electron velocity overshoot effect has been discussed.
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