Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

ADMITTANCE OF THIN FILM SILICON-ON-SAPPHIRE DIODE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

Issue	5
Date	2011

Section

SOLID-STATE PHYSICS

Article type	scientific article	UDC	621.382
Pages	37-41	Keywords	admittance, diode structures, molecular-beam epitaxy, doping profile, traps

Authors

Tikhov Stanislav ViktorovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Pavlov Dmitriy AlekseevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Shengurov Vladimir GennadevichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Denisov Sergey AleksandrovichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Chalkov Vadim YurevichNauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo
Testov Vladimir GennadevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Abstract

The admittance of Au/Si diode structures based on ultra-thin n-Si (0.5-2 ?m) layers auto-doped with phosphorus and grown by molecular-beam epitaxy has been studied. The phosphorus concentration depth profile in silicon layer has been obtained. Electron trapping has been found to occur and the parameters of capture centres have been determined.

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