IMPURITY PROFILE EVOLUTION OF BORON AND MANGANESE IMPLANTED IN Si, SiO2 AND GaAs AT TEMPERATURES OF 300 K AND 90 K |
| 5 | |
| 2011 |
| scientific article | 537.534.7 + 53.09 + 539.1.05 | ||
| 42-49 | ion implantation, sample temperature, secondary ion mass spectrometry (SIMS), impurity profiles |
| Profiles of 11В+ and 55Mn+ ions implanted in SiO2, Si and GaAs samples at room and liquid nitrogen temperatures
have been investigated. It has been established that the reduction in the target temperature during implantation
leads to a shift of ion projected ranges toward lower values. Possible reasons of the found impurity profile changes
are discussed. |
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