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Title of Article

POWERFUL SEMICONDUCTOR LASER WITH IMPROVED SPATIAL AND ENERGETIC CHARACTERISTICS


Issue
1
Date
 2012

Section
SOLID-STATE PHYSICS

Article type
 scientific article
UDC
621.382
Pages
30-32
Keywords
semiconductor laser, quantum well, leaky-wave mode


Authors
Nekorkin Sergey Mikhaylovich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Zvonkov Boris Nikolaevich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Kolesnikov Mikhail Nikolaevich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Dikareva Natalya Vasilevna
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut Nizhegorodskogo gosuniversiteta im. N.I. Lobachevskogo

Aleshkin Vladimir Yakovlevich
Institut fiziki mikrostruktur RAN, Nizhniy Novgorod

Dubinov Aleksandr Alekseevich
Institut fiziki mikrostruktur RAN, Nizhniy Novgorod


Abstract
A leaky-wave highly effective pulse semiconductor laser diode has been fabricated on the basis of a In- GaAs/GaAs/InGaP heterostructure. The radiation energy is 280 ?J with 94 % leakage through the substrate, pumped by a single current pulse with an amplitude of 130 A and a width of 5 ?s in a laser with a cavity length of 1 mm and a stripe contact width of 360 ?m.

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