POLARIZATION FEATURES OF RADIATION IN SEMICONDUCTOR VCSEL STRUCTURES |
| 5 | |
| 2011 |
| scientific article | 621.373.826 | ||
| 80-84 | vertical-cavity surface-emitting lasers, optical pumping, photoluminescence of semiconductors, multilayer Bragg mirrors |
| Photoluminescence spectra features relating to the field distribution inside the microcavity formed by a Bragg reflector and the semiconductor-air interface are considered. The angular dependent photoluminescence spectra are presented for two mutually orthogonal polarizations. The measurements performed have allowed the authors to analyze mutual agreement of the microcavity and active medium temperature-related parameters, to determine the operating ranges of parameter values providing their matching for the given structure in the system with the external resonator. The measurement results can be used to obtain linearly polarized radiation in vertical-cavity surface-emitting lasers (VCSELs) with a V-shaped cavity of the external resonator without any additional polarizing elements. |
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